FIB-SEM

 

Provides NanoScale Ion Milling and Ultra High Resolution SEM Imaging

 

NanoScale Ion Milling 

 

After identification of a defect location, FIB-SEM is used to cross-section the defect with the FIB and examine it with the SEM.  This allows sectioning step by step through the defect area and determining the layers affected by the defect. FIB-SEM produces data images at 0.8 nm spatial resolution, and elemental information from EDS points, line profiles or maps. If you are need special data of any sort please give us a call. Global uses of FIB-SEM include production control, materials development, quality control, problem solving, failure analysis, reverse engineering, data storage, and optics.

Strengths and Advantages:

    • 0.8 nm @ 15 kV electrons
    • 0.9 nm @ 1 kV electrons
    • 50V-30 kV landing voltage electron
    • 4.5 nm @ 30 kV Ga ions
    • 1.5-65 pA Ga ions
    • 100 mm diameter x 8 mm in Z
    • Excellent grain contrast imaging

Routine Uses:

    • STEM/TEM lamella prep
    • Cross-section inspections
    • Failure analysis
    • Imaging
    • Size analysis

For advanced and specialty work please give us a call.

TEM Lamella Ready for Lift-Out 
TEM Lamella Ready for Lift-Out

 

TEM Lamella Ready for Transfer 
TEM Lamella Ready for Transfer

 

Through-Silicon Vias (TSV) 
Through-Silicon Vias (TSV)

 
 

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Nanolab State-of-the-art FIB SEM