Dynamic SIMS (D-SIMS)

Characterizes the elemental composition of elements as ion and ion fragments within the top 1-3 nm



  • Process monitoring

  • Materials development

  • Quality control

  • Problem solving

  • Failure analysis

  • Reverse engineering


  • Ion implant characterizations

  • Strained Si (SiGe, SiC:P) analyses

  • SOI dopant and impurity characterizations

  • High-K metal gate composition/inter-diffusion measurement

  • Metal silicide, metal/dielectric multilayers

  • LED and infrared materials

  • Fin-FET, MEMS, DRAM characterizations


  • USJ depth profiling

  • Low, Mid, High energy implant characterizations

  • High precision ion implant characterizations

  • Metal and atmospheric contamination measurements

  • Bulk analysis of trace elements

  • Thin film analyses

  • Dopant/impurity depth distribution profiling

  • Process control and failure analyses


  • Aerospace
  • Automotive
  • Compound semiconductor
  • Data storage
  • Displays
  • Electronics
  • LEDs and Optics
  • Photovoltaic and Solar
  • Semiconductors

Secondary ion mass spectrometry (SIMS) is a technique used in materials science and surface science to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm.  SIMS is the most sensitive surface analysis technique, with elemental detection limits ranging from parts per million to parts per billion.

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