FIB-SEM (Dual-Beam™)


Ion mill into a feature, then use ultra high resolution SEM imaging to characterize the defect, or ion mill to prepare sample for lift-out


A FIB-SEM system uses a beam of Ga+ ion to mill into the surface to locate a feature or defect of interest.  The integrated SEM then uses a focused beam of electrons to image the sample in the chamber.

NanoScale imaging using FIB-SEM 

After identifying the location of a feature or defect, FIB-SEM is used to cross-section the defect with the FIB and examine it with the SEM.  This allows sectioning step by step through the defect area and determining the layers affected by the defect. FIB-SEM produces data images at 0.8 nm spatial resolution. Global uses of FIB-SEM include production control, materials development, quality control, problem solving, failure analysis, reverse engineering, data storage, and optics.

Strengths and Advantages:

    • 0.8 nm @ 15 kV electrons
    • 0.9 nm @ 1 kV electrons
    • 50V-30 kV landing voltage electron
    • 4.5 nm @ 30 kV Ga ions
    • 1.5-65 pA Ga ions
    • 100 mm diameter x 8 mm in Z
    • Excellent grain contrast imaging

Routine Uses:

    • Prep of STEM/TEM lamella
    • Cross-section inspections
    • Failure analysis
    • Imaging
    • Size analysis

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