D-SIMS instrument

IMS 6F – Cameca


  • Ion implant characterizations

  • Strained Si (SiGe, SiC:P) analyses

  • SOI dopant and impurity characterizations

  • High-K metal gate composition/inter-diffusion measurement

  • Metal silicide, metal/dielectric multilayers

  • LED and infrared materials

  • Fin-FET, MEMS, DRAM characterizations

IMS 6F - Cameca - Nanolab Technologies

IMS 6F - Cameca Analysis  


  • USJ depth profiling
  • Low, Mid, High energy implant characterizations
  • High precision ion implant characterizations
  • Metal and atmospheric contamination measurements
  • Bulk analysis of trace elements
  • Thin film analyses
  • Dopant/impurity depth distribution profiling
  • Process control and failure analyses

Secondary ion mass spectrometry (SIMS) is a technique used in materials science and surface science to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm.  SIMS is the most sensitive surface analysis technique, with elemental detection limits ranging from parts per million to parts per billion.

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