Dynamic SIMS (D-SIMS)

  

• Ion implant characterizations

• Strained Si (SiGe, SiC:P) analyses

• SOI dopant and impurity characterizations

• High-K metal gate composition/inter-diffusion measurement

• Metal silicide, metal/dielectric multilayers

• LED and infrared materials

• Fin-FET, MEMS, DRAM characterizations

ROUTINE ANALYSES

• USJ depth profiling

• Low, Mid, High energy implant characterizations

• High precision ion implant characterizations

• Metal and atmospheric contamination measurements

• Bulk analysis of trace elements

• Thin film analyses

• Dopant/impurity depth distribution profiling

• Process control and failure analyses

INDUSTRIES SERVED

• Aerospace
• Automotive
• Compound semiconductor
• Data storage
• Displays
• Electronics
• LEDs and Optics
• Photovoltaic and Solar
• Semiconductors

Secondary ion mass spectrometry (SIMS) is a technique used in materials science and surface science to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm.  SIMS is the most sensitive surface analysis technique, with elemental detection limits ranging from parts per million to parts per billion.

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