Process monitoring
Materials development
Quality control
Problem solving
Failure analysis
Reverse engineering
Ion implant characterizations
Strained Si (SiGe, SiC:P) analyses
SOI dopant and impurity characterizations
High-K metal gate composition/inter-diffusion measurement
Metal silicide, metal/dielectric multilayers
LED and infrared materials
Fin-FET, MEMS, DRAM characterizations
USJ depth profiling
Low, Mid, High energy implant characterizations
High precision ion implant characterizations
Metal and atmospheric contamination measurements
Bulk analysis of trace elements
Thin film analyses
Dopant/impurity depth distribution profiling
Process control and failure analyses
- Aerospace
- Automotive
- Compound semiconductor
- Data storage
- Displays
- Electronics
- LEDs and Optics
- Photovoltaic and Solar
- Semiconductors
Secondary ion mass spectrometry (SIMS) is a technique used in materials science and surface science to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm. SIMS is the most sensitive surface analysis technique, with elemental detection limits ranging from parts per million to parts per billion.
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