Provides NanoScale Ion Milling and Ultra High Resolution SEM Imaging
After identification of a defect location, FIB-SEM is used to cross-section the defect with the FIB and examine it with the SEM. This allows sectioning step by step through the defect area and determining the layers affected by the defect. FIB-SEM produces data images at 0.8 nm spatial resolution, and elemental information from EDS points, line profiles or maps. If you are need special data of any sort please give us a call. Global uses of FIB-SEM include production control, materials development, quality control, problem solving, failure analysis, reverse engineering, data storage, and optics.
Strengths and Advantages:
- 0.8 nm @ 15 kV electrons
- 0.9 nm @ 1 kV electrons
- 50V-30 kV landing voltage electron
- 4.5 nm @ 30 kV Ga ions
- 1.5-65 pA Ga ions
- 100 mm diameter x 8 mm in Z
- Excellent grain contrast imaging
Routine Uses:
- STEM/TEM lamella prep
- Cross-section inspections
- Failure analysis
- Imaging
- Size analysis
For advanced and specialty work please give us a call.
TEM Lamella Ready for Lift-Out
TEM Lamella Ready for Transfer
Through-Silicon Vias (TSV)
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