Uses a Ga+ ion beam to mill into the surface to expose a feature of interest, and then image that feature using high spatial resolution SEM
This technique combines the ability of FIB to cut materials with the SEM ability to take very high magnification with very high resolution images. Areas may be sectioned by the ion beam and imaged with an electron beam.
An area of interest can be “ion milled” with near atomic level resolution to remove material and imaged again and again, giving a pictorial walk through a layer of interest or a defect area.
After identification of a defect location, FIB-SEM is used to cross-section the defect with the FIB and examine it with very high spatial resolution SEM. This allows sectioning step by step through the defect area and determining the layers affected by the defect.
FIB-SEM produces data images at 0.8 nm spatial resolution, and elemental information from EDS points, line profiles or maps.
Global uses of FIB-SEM include production control, materials development, quality control, problem solving, failure analysis, reverse engineering, data storage, and optics.
Strengths and Advantages:
- 0.8 nm @ 15 kV electrons
- 0.9 nm @ 1 kV electrons
- 50V-30 kV landing voltage electron
- 4.5 nm @ 30 kV Ga ions
- 1.5-65 pA Ga ions
- 100 mm diameter x 8 mm in Z
- Excellent grain contrast imaging
- STEM/TEM lamella prep
- Cross-section inspections
- Failure analysis
- Size analysis
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TEM Lamella Ready for Lift-Out
TEM Lamella Ready for Transfer